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Magazine Name : Ieee Transactions On Electron Devices

Year : 2005 Volume number : 52 Issue: 01

Bcb-Bridged Distributed Wideband Spst Switch Using 0.25 Um In 0.5 As Metamorphic Hemts (Article)
Subject: Compound Semiconductor Devices
Author: K. C Lin     
page:      1 - 5
Design Optimization Of High Breakdown Voltage Aigan-Gan Power Hemt On An Insulating Substrate For Ron A-Vb Tradeoff Characteristics (Article)
Subject: Solid-State Power And High Voltage
Author: Waturu Saito     
page:      106 - 111
New Addressing Method Using Overlapping Scan Time Of Ac-Pdp (Article)
Subject: Optoelectronics, Displays And Imaging
Author: S. G Kim     
page:      11 - 16
Design And Fabrication Of Resurf Mosfets On 4h-Sic(0001). And 6h-(0001) (Article)
Subject: Solid-State Power And High Voltage
Author: T Kimoto     
page:      112 - 117
A Model To Study The Effect Of Selective Anodic Oxidation On Ultrthin Gate Oxides (Article)
Subject: Brief Description
Author: V G Marathe     
page:      118 - 120
Znse Homeepitaxial Msm Photodetectors With Transparent Ito Contat Electrodes (Article)
Subject: Brief Description
Author: T K Lin     
page:      121 - 123
Correct Biasing Rules For Virtual Dg Mode Operation In Soi-Mode Operation In Soi-Mosfets (Article)
Subject: Brief Description
Author: A Ohata     
page:      124 - 125
Study Of Cmos Aps Responsivity Enhancement: Ring-Shaped Photodiode (Article)
Subject: Brief Description
Author: T Danov     
page:      126 - 129
Shoc Rfectifier: A New Metal-Semiconductor Device With Excellent Forward And Reverse Characteristics (Article)
Subject: Brief Description
Author: M.J Kumar     
page:      130 - 131
An Analysis Of Base Bias Current Effect On Sige Hbts (Article)
Subject: Brief Description
Author: Y. S Lin     
page:      132 - 135
Effects Of Pai On Interface Properties Between Hfsio Gate Dielectric And Silicon Substrate (Article)
Subject: Brief Description
Author: Hiroshi Wada     
page:      136 - 139
Effects Of Pre-Reset Conditions On Reset Discharge From Ramp Reset Waveforms In Ac Plasma Display Panel (Article)
Subject: Optoelectronics, Displays And Imaging
Author: B J Shin     
page:      17 - 22
Two-Dimensional Analytical Threshold Voltage Model For Dmg Epi-Mosfet (Article)
Subject: Silicon Devices
Author: K Goel     
page:      23 - 29
Modeling Mechanical Stress Effect On Dopant Diffusion In Scaled Mosfets (Article)
Subject: Silicon Devices
Author: Y M Sheu     
page:      30 - 38
Threshold Voltage Control In Nisi-Gated Mosfets Through Siis (Article)
Subject: Silicon Devices
Author: Jakub Kedzierski     
page:      39 - 46
Simulated Operation And Properties Of Source-Gated Thin-Film Transistors (Article)
Subject: Silicon Devices
Author: T Lindner     
page:      47 - 55
Nanoscale Finfets With Gate-Source-Drain Underlap (Article)
Subject: Silicon Devices
Author: V P Trivedi     
page:      56 - 62
High-Voltage Normally Off Gan Mosfets On Sapphire Substrates (Article)
Subject: Compound Semiconductor Devices
Author: K Matocha     
page:      6 - 10
Impacts Of Nonrectangular Fin Cross Section On The Electrical Characteristics Of Finfet (Article)
Subject: Silicon Devices
Author: X. Wu     
page:      63 - 68
Impact Ionization Mos (I-Mos) Part I: Device And Circuit Simulations (Article)
Subject: Silicon Devices
Author: K Gopalakrishnan     
page:      69 - 76
Impact Ionization Mos (I-Mos) Part Ii: Experimental Results (Article)
Subject: Silicon Devices
Author: K Gopalakrishnan     
page:      77 - 84
Investigation Of The Source/Drain Asymmetric Effects Due To Gate Misalignment In Planar Doubl-Gate Mosfets (Article)
Subject: Silicon Devices
Author: C Yin     
page:      85 - 90
Modeling Of Boron And Phosphorus Implantation Into (100) Germanium (Article)
Subject: Solid-State Device Phenomena
Author: Y S Suh     
page:      91 - 98
Analysis And Design Of The Dual-Gate Inversion Layer Emitter Transistor (Article)
Subject: Solid-State Device Phenomena
Author: N K Udugampola     
page:      99 - 105